Enhancement and Modeling of Drain Current in Negative Capacitance Double Gate TFET
نویسندگان
چکیده
The drain current improvement in a Negative Capacitance Double Gate Tunnel Field Effect Transistor (NC-DG TFET) with the help of Heterojunction (HJ) at source-channel region is proposed and modeled this paper. gate oxide TFET stacked configuration high-k over low-k to improve control without any lattice mismatches. Tangent Line Approximation (TLA) method used here model accurately. validated by incorporating two dimensional simulation DG-HJ one Landau-Khalatnikov (LK) equation. matches excellently device results. impact topology also studied paper comparing characteristics unstacked oxide. Voltage amplification factor (Av), which an important parameter NC devices analyzed.
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ژورنال
عنوان ژورنال: Silicon
سال: 2021
ISSN: ['1876-9918', '1876-990X']
DOI: https://doi.org/10.1007/s12633-021-01382-z